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John O | March 2017

GE Aviation given Army contract to develop silicon carbide electronics

GE Aviation recently announced that it received a $4.1 million contract from the U.S. Army to develop silicon-carbide power electronics that could support high-voltage, next generation ground vehicle power architecture.



GE Aviation has been awarded a contract by the U.S. Army. (Wikimedia Commons)


According to GE Aviation, this new technology would include high-density packaging to manage the on-board power of the vehicle, while eliminating the need for electronic cooling systems.


Vic Bonneau, president of Electrical Power Systems for GE Aviation said, “Our similar Silicon Carbide based programs and planned re-use have led to this new critical high temperature application.”


The contract requires three hardware deliverables after a two-year research and development program. GE Aviation will be demonstrating the effectiveness and practicality of its silicon carbide MOSFET technology in a 200 kW starter generator controller.


The press release explained, “The integrated starter generator controller (ISGC) will provide sensored and sensorless control for multiple generator types in a single line replaceable unit weighing less than 50 pounds.  It will operate at 125 degrees C ambient in bi-directional operation for engine start.  The ISGC will utilize 105 degrees C coolant and will be CANbus programmable.”


This is GE’s fifth contract as part of the Army’s Tank Automotive Research, Development and Engineering Center (TARDEC) next generation vehicle electrical power architecture leap-ahead technology development.


To learn more about GE’s silicon carbide MOSFET technology, read http://www.geglobalresearch.com/blog/silicon-carbide-power-semiconductor-devices-in-the-cleanroom

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