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March 2015

Ammono Launches Fabrication of 2-inch Semi-insulating GaN Substrates for Space Application


february, 2015 - ammono s.a., the manufacturer of high quality gallium nitride by ammonothermal method, succeeded in development of a new type of highly resistive 2-inch ammono-gan semiconductor crystals. the crystals possess a high structural quality, confirmed by narrow x-ray diffraction rocking curves (20 arcsec) and large curvature radius (reaching few hundred of meters). 

the resistivity, estimated by capacitive and microwave methods, is at least 1010 cm, proving extremely isolating properties of the new material. the crystals were successfully used for production of 2-inch highly-resistive substrates. the work was performed in frame of european space agency pecs programme “low dislocation gan for space applications” under contract number 4000108320/13/nl/kml and supervision of dr andrew barnes (esa).

new type of ammono highly resistive material is our response to the specific demands of the future semiconductor materials used in space technology.

                                 

                          2-inch semi-insulating gan substrate obtained by ammonothermal method.

our new semi-insulating ammono-gan substrates – said marcin zajac phd, senior scientist and project coordinator at ammono - enable efficient epitaxy and processing of gan-based high electron mobility transistors (hemts). high substrate resistivity prevents from parasitic current leakage in lateral transistors, which is necessary for a proper operation of the final device. moreover, it is expected, that the offered very low dislocation density of the ammono-gan substrate and epitaxial device structure is a key issue in device reliability, which is essential for the application of the developed material in space electronics -transistors for rf communication, radars, dc-dc power converters, high efficiency solar panels and many others”.


about

ammono s.a. is a polish semiconductor company founded in 1999. on the basis of a proprietary patented technology it has developed a unique ammonothermal gallium nitride manufacturing method. today ammono is the world leader in extremely low dislocation gallium nitride substrate manufacturing, exporting its products world-wide. main applications of gan are next generation of high power electronics, optoelectronics and detectors. ammono has won the prestigious compound semiconductor industry award for the best product in 2012 and has been iso9001 certified since 2009.

contact

website: www.ammono.com

tel. +48 (22) 811 56 07, +48 (22) 814 02 07

email: info@ammono@com

regular mail:

ammono s.a.

prusa 2

00-493 warsaw

poland

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