toshiba america electronic components, inc. (taec) has extended its range of high-efficiency u-mos ix-h mosfets. the new 60v tpw1r306pl is an n-channel device in a dsop advance surface mount device (smd) package that offers dual-sided cooling.
the enhanced thermal dissipation provided by dual-sided cooling can help to reduce device count and save space in applications with high component density, including: dc-dc converters, secondary-side circuits of ac-dc power supplies and motor drives in cordless home appliances and power tools.
the tpw1r306pl has an ultra-low typical on-resistance (@vgs =10v) of just 0.95mω and is offered in a very small form factor of 5x6mm. maximum drain current and power dissipation are 100a and 170w, respectively. additionally, the tpw1r306pl's top-of-package thermal resistance rating (rth (ch-c) of 0.88k/w) is very low.
toshiba's u-mos ix-h process enables an exceptional performance trade-off between rds(on) and output capacitance/output charge, making typical qoss just 77.5nc (@vds=30v, f=1mhz). this allows designers to further improve system performance and efficiency by raising switching speeds and reducing switching losses.