qorvo, a leading provider of innovative rf solutions that connect the world, introduced the highest power gallium nitride on silicon carbide (gan-on-sic) rf transistor.
operating with 1.8kw at 65 volts, the qpd1025 delivers the outstanding signal integrity and extended reach essential for l-band avionics and identification friend or foe (iff) applications.
asif anwar, executive director of strategy analytics’ strategic technologies practice, said, “qorvo’s qpd1025 transistor represents a true game changer in this segment. it offers comparable pulsed power and duty cycle performance to silicon ldmos and silicon bipolar devices, but with a marked improvement in efficiency.
“qorvo further achieves this high power and efficiency without introducing exotic materials such as diamond into the process flow for thermal management, ensuring a solution that is cost effective.”
roger hall, general manager, qorvo high power solutions, said, “this new high-power transistor will save customers time and money by eliminating the difficult exercise of combining amplifiers to create multi-kilowatt solutions. the qpd1025 has significantly better drain efficiency and beats ldmos by nearly 15 percentage points of efficiency, which is significant in iff and avionics applications.”
qorvo offers the industry’s largest, most innovative gan-on-sic portfolio. the company’s products deliver high power density, reduced size, excellent gain, high reliability and process maturity, with volume production dating back to 2000.
engineering samples of the qpd1025 are available now.