the junction to case (θjc) thermal resistance of a semiconductor package is a useful and frequently utilized metric in thermal management of electronics. this metric is not an intrinsic property of the device but depends to some extend on the cooling condition at the case surface intended for heat sinking. also, θjc can be measured only with limited accuracy by the methods existing today.
this article investigates the dependence of the θjc of power packages on different cooling boundary conditions and gives an assessment of the accuracy of two measurements. methods: the traditional method using thermocouples to measure the case temperature and the recently proposed transient dual interface (tdi) method. this accuracy is measured against results generated by computer simulations.
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